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Fabian Thome
Fabian Thome
Senior Research Scientist, Fraunhofer Institute for Applied Solid State Physics IAF
Verified email at iaf.fraunhofer.de
Title
Cited by
Cited by
Year
Highly Isolating and Broadband Single-Pole Double-Throw Switches for Millimeter-Wave Applications Up to 330 GHz
F Thome, O Ambacher
IEEE Transactions on Microwave Theory and Techniques 66 (4), 1998-2009, 2017
402017
Broadband High-Power W-Band Amplifier MMICs Based on Stacked-HEMT Unit Cells
F Thome, A Leuther, M Schlechtweg, O Ambacher
IEEE Transactions on Microwave Theory and Techniques 66 (3), 1312-1318, 2017
402017
Comparison of a 35-nm and a 50-nm gate-length metamorphic HEMT technology for millimeter-wave low-noise amplifier MMICs
F Thome, A Leuther, H Massler, M Schlechtweg, O Ambacher
2017 IEEE MTT-S International Microwave Symposium (IMS), 752-755, 2017
332017
First Demonstration of Distributed Amplifier MMICs With More Than 300-GHz Bandwidth
F Thome, A Leuther
IEEE Journal of Solid-State Circuits, 2021
312021
A Wideband E/W-Band Low-Noise Amplifier MMIC in a 70-nm Gate-Length GaN HEMT Technology
F Thome, P Brückner, S Leone, R Quay
IEEE Transactions on Microwave Theory and Techniques, 2021
282021
Comparison of two W-band low-noise amplifier MMICs with ultra low power consumption based on 50nm InGaAs mHEMT technology
F Thome, H Massler, S Wagner, A Leuther, I Kallfass, M Schlechtweg, ...
2013 IEEE MTT-S International Microwave Symposium Digest (MTT), 1-4, 2013
272013
A 50-nm Gate-Length Metamorphic HEMT Technology Optimized for Cryogenic Ultra-Low-Noise Operation
F Heinz, F Thome, A Leuther, O Ambacher
IEEE Transactions on Microwave Theory and Techniques, 2021
252021
Low-Loss Millimeter-Wave SPDT Switch MMICs in a Metamorphic HEMT Technology
F Thome, A Leuther, O Ambacher
IEEE Microwave and Wireless Components Letters 30 (2), 2020
212020
Millimeter-Wave Single-Pole Double-Throw Switches Based on a 100-nm Gate-Length AlGaN/GaN-HEMT Technology
F Thome, P Brückner, R Quay, O Ambacher
IEEE MTT-S International Microwave Symposium (IMS), 1403-1406, 2019
212019
W-Band SPDT Switches in Planar and Tri-Gate 100-nm Gate-Length GaN-HEMT Technology
F Thome, E Ture, P Brückner, R Quay, O Ambacher
German Microwave Conference (GeMiC), 331-334, 2018
212018
Stability Investigation of Large Gate-Width Metamorphic High Electron-Mobility Transistors at Cryogenic Temperature
G Moschetti, F Thome, M Ohlrogge, J Goliasch, F Schäfer, B Aja, ...
IEEE Transactions on Microwave Theory and Techniques 64 (10), 3139-3150, 2016
212016
Limitations and Implementation Strategies of Interstage Matching in a 6-W, 28-38-GHz GaN Power Amplifier MMIC
P Neininger, L John, F Thome, C Friesicke, P Brücker, R Quay, T Zwick
IEEE Transactions on Microwave Theory and Techniques, 2021
192021
W-Band LNA MMICs Based on a Noise-Optimized 50-nm Gate-Length Metamorphic HEMT Technology
F Thome, A Leuther, F Heinz, O Ambacher
IEEE MTT-S International Microwave Symposium (IMS), 168-171, 2019
192019
Prospects and Limitations of Stacked-FET Approaches for Enhanced Output Power in Voltage-Controlled Oscillators
F Thome, S Maroldt, O Ambacher
IEEE Transactions on Microwave Theory and Techniques 64 (3), 836-846, 2016
182016
A 50-nm gate-length metamorphic HEMT distributed power amplifier MMIC based on stacked-HEMT unit cells
F Thome, O Ambacher
2017 IEEE MTT-S International Microwave Symposium (IMS), 1695-1698, 2017
162017
A 75-305-GHz Power Amplifier MMIC With 10-14.9-dBm Pout in a 35-nm InGaAs mHEMT Technology
F Thome, A Leuther
IEEE Microwave and Wireless Components Letters 31 (6), 2021
152021
A 67-116-GHz Cryogenic Low-Noise Amplifier in a 50-nm InGaAs Metamorphic HEMT Technology
F Thome, F Schäfer, S Türk, P Yagoubov, A Leuther
IEEE Microwave and Wireless Components Letters, 2021
152021
InGaAs MOSHEMT W-Band LNAs on Silicon and Gallium Arsenide Substrates
F Thome, F Heinz, A Leuther
IEEE Microwave and Wireless Components Letters 30 (11), 1089-1092, 2020
152020
A Scalable Small-Signal and Noise Model for High-Electron-Mobility Transistors Working Down to Cryogenic Temperatures
F Heinz, F Thome, D Schwantuschke, A Leuther, O Ambacher
IEEE Transactions on Microwave Theory and Techniques, 2021
142021
Novel destructive-interference-envelope detector for high data rate ASK demodulation in wireless communication receivers
F Thome, S Maroldt, O Ambacher
2015 IEEE MTT-S International Microwave Symposium, 1-4, 2015
142015
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