Dynamical mean-field theory of strongly correlated fermion systems and the limit of infinite dimensions A Georges, G Kotliar, W Krauth, MJ Rozenberg Reviews of Modern Physics 68 (1), 13, 1996 | 6760 | 1996 |
Two-dimensional electron gas with universal subbands at the surface of SrTiO3 AF Santander-Syro, O Copie, T Kondo, F Fortuna, S Pailhes, R Weht, ... Nature 469 (7329), 189-193, 2011 | 671 | 2011 |
Nonvolatile memory with multilevel switching: a basic model MJ Rozenberg, IH Inoue, MJ Sanchez Physical review letters 92 (17), 178302, 2004 | 631 | 2004 |
Mott transition in the d=∞ Hubbard model at zero temperature GK X. Y. Zhang, M. J. Rozenberg Physical Review Letters 70, 1666, 1993 | 425 | 1993 |
Mott-Hubbard transition in infinite dimensions MJ Rozenberg, XY Zhang, G Kotliar Physical review letters 69 (8), 1236, 1992 | 314 | 1992 |
Optical conductivity in Mott-Hubbard systems MJ Rozenberg, G Kotliar, H Kajueter, GA Thomas, DH Rapkine, JM Honig, ... Physical review letters 75 (1), 105, 1995 | 307 | 1995 |
Mott-Hubbard transition in infinite dimensions. II MJ Rozenberg, G Kotliar, XY Zhang Physical Review B 49 (15), 10181, 1994 | 280 | 1994 |
Transfer of spectral weight in spectroscopies of correlated electron systems MJ Rozenberg, G Kotliar, H Kajueter Physical Review B 54 (12), 8452, 1996 | 198 | 1996 |
Mechanism for bipolar resistive switching in transition-metal oxides MJ Rozenberg, MJ Sanchez, R Weht, C Acha, F Gomez-Marlasca, P Levy Physical Review B 81 (11), 115101, 2010 | 184 | 2010 |
Integer-filling metal-insulator transitions in the degenerate hubbard model MJ Rozenberg Physical Review B 55 (8), R4855, 1997 | 181 | 1997 |
Landau theory of the finite temperature Mott transition G Kotliar, E Lange, MJ Rozenberg Physical review letters 84 (22), 5180, 2000 | 178 | 2000 |
Critical behavior near the Mott transition in the Hubbard model G Moeller, Q Si, G Kotliar, M Rozenberg, DS Fisher Physical review letters 74 (11), 2082, 1995 | 172 | 1995 |
Resistance switching and formation of a conductive bridge in metal/binary oxide/metal structure for memory devices K Fujiwara, T Nemoto, MJ Rozenberg, Y Nakamura, H Takagi Japanese Journal of Applied Physics 47 (8R), 6266, 2008 | 168 | 2008 |
Finite temperature mott transition in the hubbard model in infinite dimensions MJ Rozenberg, R Chitra, G Kotliar Physical review letters 83 (17), 3498, 1999 | 166 | 1999 |
Mechanism of electric-pulse-induced resistance switching in manganites M Quintero, P Levy, AG Leyva, MJ Rozenberg Physical review letters 98 (11), 116601, 2007 | 153 | 2007 |
Strong electron correlation effects in nonvolatile electronic memory devices MJ Rozenberg, IH Inoue, MJ Sanchez Applied Physics Letters 88 (3), 033510, 2006 | 147 | 2006 |
Correlation induced insulator to metal transitions Q Si, MJ Rozenberg, G Kotliar, AE Ruckenstein Physical review letters 72 (17), 2761, 1994 | 139 | 1994 |
Electronic structure of Ca1− xSrxVO3: A tale of two energy scales K Maiti, DD Sarma, MJ Rozenberg, IH Inoue, H Makino, O Goto, M Pedio, ... EPL (Europhysics Letters) 55 (2), 246, 2001 | 125 | 2001 |
Dynamical mean field theory with the density matrix renormalization group DJ García, K Hallberg, MJ Rozenberg Physical review letters 93 (24), 246403, 2004 | 124 | 2004 |
Universal Electric‐Field‐Driven Resistive Transition in Narrow‐Gap Mott Insulators P Stoliar, L Cario, E Janod, B Corraze, C Guillot‐Deudon, ... Advanced materials 25 (23), 3222-3226, 2013 | 112 | 2013 |