Christoph Adelmann
Christoph Adelmann
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Cited by
Cited by
Electrical detection of spin transport in lateral ferromagnet–semiconductor devices
X Lou, C Adelmann, SA Crooker, ES Garlid, J Zhang, KSM Reddy, ...
Nature Physics 3 (3), 197-202, 2007
Opportunities and challenges for spintronics in the microelectronics industry
B Dieny, IL Prejbeanu, K Garello, P Gambardella, P Freitas, R Lehndorff, ...
Nature Electronics 3 (8), 446-459, 2020
Stabilizing the ferroelectric phase in doped hafnium oxide
M Hoffmann, U Schroeder, T Schenk, T Shimizu, H Funakubo, O Sakata, ...
Journal of Applied Physics 118 (7), 2015
The 2021 magnonics roadmap
A Barman, G Gubbiotti, S Ladak, AO Adeyeye, M Krawczyk, J Gräfe, ...
Journal of Physics: Condensed Matter 33 (41), 413001, 2021
Imaging spin transport in lateral ferromagnet/semiconductor structures
SA Crooker, M Furis, X Lou, C Adelmann, DL Smith, CJ Palmstrøm, ...
Science 309 (5744), 2191-2195, 2005
Impact of different dopants on the switching properties of ferroelectric hafniumoxide
U Schroeder, E Yurchuk, J Müller, D Martin, T Schenk, P Polakowski, ...
Japanese Journal of Applied Physics 53 (8S1), 08LE02, 2014
Advances in magnetics roadmap on spin-wave computing
AV Chumak, P Kabos, M Wu, C Abert, C Adelmann, AO Adeyeye, ...
IEEE Transactions on Magnetics 58 (6), 1-72, 2022
High-k dielectrics for future generation memory devices
JA Kittl, K Opsomer, M Popovici, N Menou, B Kaczer, XP Wang, ...
Microelectronic engineering 86 (7-9), 1789-1795, 2009
Ferroelectricity in Gd-doped HfO2 thin films
S Mueller, C Adelmann, A Singh, S Van Elshocht, U Schroeder, ...
ECS Journal of Solid State Science and Technology 1 (6), N123, 2012
Electrical detection of spin accumulation at a ferromagnet-semiconductor interface
X Lou, C Adelmann, M Furis, SA Crooker, CJ Palmstrøm, PA Crowell
Physical review letters 96 (17), 176603, 2006
Introduction to spin wave computing
A Mahmoud, F Ciubotaru, F Vanderveken, AV Chumak, S Hamdioui, ...
Journal of Applied Physics 128 (16), 2020
Experimental prototype of a spin-wave majority gate
T Fischer, M Kewenig, DA Bozhko, AA Serga, II Syvorotka, F Ciubotaru, ...
Applied Physics Letters 110 (15), 2017
Dynamically stable gallium surface coverages during plasma-assisted molecular-beam epitaxy of (0001) GaN
C Adelmann, J Brault, D Jalabert, P Gentile, H Mariette, G Mula, B Daudin
Journal of Applied Physics 91 (12), 9638-9645, 2002
Direct comparison of recombination dynamics in cubic and hexagonal GaN/AlN quantum dots
J Simon, NT Pelekanos, C Adelmann, E Martínez-Guerrero, R André, ...
Physical Review B 68 (3), 035312, 2003
Identification of the ferroelectric switching process and dopant-dependent switching properties in orthorhombic HfO2: A first principles insight
S Clima, DJ Wouters, C Adelmann, T Schenk, U Schroeder, M Jurczak, ...
Applied Physics Letters 104 (9), 2014
Self-assembled InGaN quantum dots grown by molecular-beam epitaxy
C Adelmann, J Simon, G Feuillet, NT Pelekanos, B Daudin, G Fishman
Applied Physics Letters 76 (12), 1570-1572, 2000
Spin injection and relaxation in ferromagnet-semiconductor heterostructures
C Adelmann, X Lou, J Strand, CJ Palmstrøm, PA Crowell
Physical Review B 71 (12), 121301, 2005
Spin injection from the Heusler alloy Co2MnGe into Al0. 1Ga0. 9As∕ GaAs heterostructures
XY Dong, C Adelmann, JQ Xie, CJ Palmstrøm, X Lou, J Strand, ...
Applied Physics Letters 86 (10), 2005
Surfactant effect of gallium during molecular-beam epitaxy of GaN on AlN (0001)
G Mula, C Adelmann, S Moehl, J Oullier, B Daudin
Physical Review B 64 (19), 195406, 2001
Gallium adsorption on (0001) GaN surfaces
C Adelmann, J Brault, G Mula, B Daudin, L Lymperakis, J Neugebauer
Physical Review B 67 (16), 165419, 2003
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