High quantum efficiency InGaN/GaN multiple quantum well solar cells with spectral response extending out to 520 nm RM Farrell, CJ Neufeld, SC Cruz, JR Lang, M Iza, S Keller, S Nakamura, ... Applied Physics Letters 98 (20), 2011 | 153 | 2011 |
Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy DA Browne, EC Young, JR Lang, CA Hurni, JS Speck Journal of Vacuum Science & Technology A 30 (4), 2012 | 110 | 2012 |
Comparison of GaAsP solar cells on GaP and GaP/Si JR Lang, J Faucher, S Tomasulo, K Nay Yaung, M Larry Lee Applied Physics Letters 103 (9), 2013 | 100 | 2013 |
Carrier escape mechanism dependence on barrier thickness and temperature in InGaN quantum well solar cells JR Lang, NG Young, RM Farrell, YR Wu, JS Speck Applied Physics Letters 101 (18), 2012 | 98 | 2012 |
Effect of doping and polarization on carrier collection in InGaN quantum well solar cells CJ Neufeld, SC Cruz, RM Farrell, M Iza, JR Lang, S Keller, S Nakamura, ... Applied Physics Letters 98 (24), 2011 | 91 | 2011 |
GaAsP solar cells on GaP/Si with low threading dislocation density KN Yaung, M Vaisman, J Lang, ML Lee Applied Physics Letters 109 (3), 2016 | 90 | 2016 |
High external quantum efficiency and fill-factor InGaN/GaN heterojunction solar cells grown by NH3-based molecular beam epitaxy JR Lang, CJ Neufeld, CA Hurni, SC Cruz, E Matioli, UK Mishra, JS Speck Applied Physics Letters 98, 131115, 2011 | 84 | 2011 |
pn junctions on Ga-face GaN grown by NH3 molecular beam epitaxy with low ideality factors and low reverse currents CA Hurni, O Bierwagen, JR Lang, BM McSkimming, CS Gallinat, ... Applied Physics Letters 97 (22), 222113, 2010 | 58 | 2010 |
Effects of growth temperature on Mg-doped GaN grown by ammonia molecular beam epitaxy CA Hurni, JR Lang, PG Burke, JS Speck Applied Physics Letters 101 (10), 2012 | 40 | 2012 |
Towards high efficiency GaAsP solar cells on (001) GaP/Si KN Yaung, JR Lang, ML Lee 2014 IEEE 40th Photovoltaic Specialist Conference (PVSC), 0831-0835, 2014 | 34 | 2014 |
Comparison of single junction AlGaInP and GaInP solar cells grown by molecular beam epitaxy T Masuda, S Tomasulo, JR Lang, ML Lee Journal of Applied Physics 117 (9), 2015 | 31 | 2015 |
NH3-rich growth of InGaN and InGaN/GaN superlattices by NH3-based molecular beam epitaxy JR Lang, JS Speck Journal of Crystal Growth 346, 50-55, 2012 | 25 | 2012 |
Advances in dilute nitride multi-junction solar cells for space power applications F Suarez, T Liu, A Sukiasyan, J Lang, E Pickett, E Lucow, T Bilir, S Chary, ... E3S Web of Conferences 16, 03006, 2017 | 24 | 2017 |
Defect selective etching of GaAsyP1− y photovoltaic materials KN Yaung, S Tomasulo, JR Lang, J Faucher, ML Lee Journal of crystal growth 404, 140-145, 2014 | 15 | 2014 |
Effects of growth temperature and device structure on GaP solar cells grown by molecular beam epitaxy M Vaisman, S Tomasulo, T Masuda, JR Lang, J Faucher, ML Lee Applied Physics Letters 106 (6), 2015 | 13 | 2015 |
High efficiency multijunction photovoltaic cells F Suarez, T Liu, HB Yuen, DT Bilir, A Sukiasyan, J Lang US Patent App. 14/887,021, 2017 | 9 | 2017 |
Optimization of annealing process for improved InGaN solar cell performance NC Das, ML Reed, AV Sampath, H Shen, M Wraback, RM Farrell, M Iza, ... Journal of electronic materials 42, 3467-3470, 2013 | 8 | 2013 |
Molecular beam epitaxy of nitrides for advanced electronic materials G Koblmüller, JR Lang, EC Young, JS Speck Handbook of Crystal Growth, 705-754, 2015 | 7 | 2015 |
InGaN-based solar cells and high-performance broadband optical coatings for ultrahigh efficiency hybrid multijunction device designs RM Farrell, DJ Friedman, NG Young, EE Perl, N Singh, JR Lang, ... CLEO: Applications and Technology, ATh4N. 4, 2013 | 7 | 2013 |
2.19 eV InGaP solar cells on GaP substrates S Tomasulo, J Faucher, JR Lang, KN Yaung, ML Lee 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC), 3324-3328, 2013 | 5 | 2013 |